Electron spin is an important degree of freedom which can complement charge in information storage and logic devices. With respect to the material selection for spintronics, two-dimensional (2D) materials and their van der Waals heterostructures offer new opportunities that are unfeasible in bulk materials. Remarkable recent advances in 2D-based spintronic research allow us to approach the realization of practical applications [1].

In this seminar, I will first discuss the basics of graphene spintronics and our attempts for solving its major challenges. Our advancements include optospintronics functionality and realization of a spin switch effect have been achieved by creating artificial interfaces with other 2D crystals such as boron nitride and transition metal dichalcogenides [2-3]. In the second part of my talk, I will discuss our spin transport measurements performed in a 2D semiconductor material. I will introduce ultra-thin, semiconducting black phosphorus as a promising material for possible spintronics applications requiring rectification and amplification actions [4]. I will demonstrate that its spin transport properties can be manipulated in a transistor-like manner by just controlling the electric field even at room temperature thanks to its semiconducting nature.

1. A. Avsar et al., Rev. Mod. Phys., 92 (2), 021003 (2020).
2. A. Avsar et al., NPG Asia Mater., 8, e274 (2016).
3. A. Avsar et al., ACS Nano, 11 (11), 11678–11686 (2017).
4. A. Avsar et al., Nat. Phys., 13, 888-894 (2017).