The discovery of the spin Hall effect (SHE) enabled the efficient generation and manipulation of the spin current [1]. The magnetic spin Hall effect provides a unique opportunity to control the spin current and relevant device performance with controllable magnetization [2]. In this talk, we report the magnetic spin Hall effect both in non-collinear antiferromagnet Mn3Pt and a collinear antiferromagnet Mn2Au. We generate tiny or negligible out-of-plane polarized spin current when the charge current is applied along the axis perpendicular to the magnetic mirror plane of Mn3Pt/permalloy bilayers, but robust when the current is parallel to the magnetic mirror plane in all of the Mn3Pt films with different orientations [3]. Such a principle is also observed in noncollinear antiferromagnet Mn3SnN. In Mn2Au, the spin currents are produced at two spin sublattices with broken spatial symmetry, and the antiparallel antiferromagnetic moments play an important role. Therefore, we term the Néel vector-dependent spin Hal effect the ‘antiferromagnetic spin Hall effect’. The out-of-plane spins from the antiferromagnetic spin Hall effect are favourable for the efficient switching of perpendicular magnetized devices, which is required for high-density applications [4,5]. The antiferromagnetic spin Hall effect adds another twist to the atomic-level control of spin currents via the antiferromagnetic spin structure.

[1] Y. K. Kato et al., Science 306, 1910–1913 (2004).
[2] M. Kimata et al., Nature 565, 627–630 (2019).
[3] X. F. Zhou et al., submitted.
[4] X. Z. Chen et al., Nat. Mater. 18, 931–935 (2019).
[5] X. Z. Chen et al., Nat. Mater. DOI: 10.1038/s41563-021-00946-z (2021).