Engineering 2D materials heterostructures by combining the best of different layers in one ultimate unit can offer a plethora of opportunities in condensed matter physics. Here, we demonstrated electronic creation, transport, and control of spin polarization in 2D materials heterostructures at room temperature. While large-area CVD graphene is shown to be an excellent medium for long-distance spin communication and fabrication of spin circuits [1,2], the insulating CVD h-BN has shown a substantial tunnel spin polarization up to 65% . Furthermore, by inducing spin-orbit coupling and spin absorption effects, we demonstrated an electrical gate control of spin-polarization and spin lifetime in graphene/MoS2 heterostructures .
The induction of proximity induced spin-orbit coupling and magnetic exchange interactions in graphene can provide a new electronic state of mater. Recently, we combined graphene with topological insulators in van der Waals heterostructures to demonstrate the emergence of a strong proximity-induced spin-orbit coupling in graphene , consequently giving rise to a giant and gate-tunable spin galvanic effects at room temperature . Using graphene in heterostructure with a layered magnetic insulator CrGeTe, we also demonstrated proximity induced magnetic exchange interaction in graphene .
The electrical creation of spin polarization in topological materials is promising for applications in spin-orbit and quantum technologies. By utilizing the electronic band structures of the topological Weyl semimetals and Rashba spin-orbit materials, we demonstrated significant charge-spin conversion effects up to room temperature. We reported a substantial charge-spin conversion effect in Weyl semimetal candidate WTe2 [8,9] and Rashba material BiTeBr , and show its application for spin injection into graphene at room temperature. These findings demonstrate all-electrical spintronic devices at room temperature in van der Waals heterostructure, which can be essential building blocks in future device architectures.
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